GaAs阴极激活氧源获得技术研究  

Study on Obtaining Technology of Oxygen Source for GaAs Cathode Activation

作　　者：徐江涛[1] 徐珂[2] 

机构地区：[1]北方夜视技术集团股份有限公司,陕西西安710065 [2]西安应用光学研究所,陕西西安710065

出　　处：《真空电子技术》2011年第1期50-52,共3页Vacuum Electronics

摘　　要：为满足制备GaAs阴极高灵敏度的需要,对三种获得高纯氧的方法进行了试验研究。结果表明,膨胀法进氧纯度最低,银管渗氧纯度高于80%,过氧化钡氧纯度最高,可高达90%。经阴极激活证明,用过氧化钡氧源制成的三代管内阴极灵敏度最高,是获得负电子亲合势高灵敏度阴极的最佳氧源。In order to meet the high sensitivity requirement of GaAs cathode,three methods of obtaining high pure oxygen are experimentally researched.The results show that expansion method has lowest oxygen purity,silver pipe penetration method has purity higher than 80% and barium superoxide method has the highest purity of more than 90%.The cathode activation experiment proves that barium superoxide methode is best for cathode.It is the best oxygen source for obtaing high sensitivity of negative electron affinity（NEA）.

关 键 词：GaAs阴极 激活 氧源 过氧化钡 负电子亲合势 

分 类 号：TN383[电子电信—物理电子学]