Characteristics of on-chip dipole antenna using diamond for intra-chip wireless interconnect  

作　　者：HE XiaoWei ZHANG MinXuan LI JinWen 

机构地区：[1]PDL 501,School of Computer,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China(Technological Sciences)》2011年第4期1035-1043,共9页中国科学（技术科学英文版）

基　　金：supported by the National High Technology Research and Development Program of China (Grant Nos. 2009AA01Z124 and 2009AA01Z102);the National Natural Science Foundation of China (Grant No. 60873212)

摘　　要：In this paper,a 2-mm long on-chip dipole antenna pair on silicon substrate is simulated to investigate the transmission characteristics.A novel technique is proposed by employing a 0.35-mm thick diamond layer between silicon substrate and heat sink to improve antenna performance.The simulated transmission gain of this antenna pair with 1 mm separation on a 10-Ω cm silicon substrate increases by 9 dB at 20 GHz.A modified plane wave model involving diamond layer is also presented to explain gain improvement.Effects of dielectric variety,diamond thickness,substrate resistivity and antenna pair separation on transmission gain have been studied.The results indicate that thinner diamond layer along with high resistivity substrate is preferred.Our method makes integrated dipole antennas well suitable for intra-chip wireless interconnection which is known as a future solution to replace critical wiring interconnection.

关 键 词：dipole antenna DIAMOND transmission gain wireless interconnect 

分 类 号：TN821.4[电子电信—信息与通信工程] TQ163.4[化学工程—高温制品工业]