Study on photoluminescence of thermally treated Bi_(12)GeO_(20) and Mo:Bi_(12)GeO_(20) crystals  

作　　者：YU PingSheng SU LiangBi TANG HuiLi GUO Xin ZHAO HengYu YANG QiuHong XU Jun 

机构地区：[1]School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China [2]Key Laboratory of Tranaparent and Opto-Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

出　　处：《Science China(Technological Sciences)》2011年第5期1287-1291,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60778036, 60938001, 61078053, 51002175);the Science and Technology Commission of Shanghai Municipality (Grant No. 09JC1415300);the Hundred Talents Project of the Chinese Academy of Sciences

摘　　要：Photoluminescence (PL) of Bi12GeO20 and Mo doped Bi12GeO20 (Mo: Bi12GeO20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray diffraction analysis, absorption and Raman scattering spectra of these crystals were also measured. Pure Bi12GeO20 after annealing in N2 atmosphere at 450 oC and 550 °C show predominant emissions at about 745 and 1250 nm bands, while the emission peaks of Mo:Bi12GeO20 crystals untreated or after annealing in Ar at 300 °C are at around 538 and 1165 nm. The results suggest that annealing induces intrinsic luminescence of Bi in pure Bi12GeO20 at room temperature and Mo influences the luminescence centers of Bi12GeO20. The emission peaks of Bi12GeO20 and Mo: Bi12GeO20 probably owe to lower-valent Bi ions.

关 键 词：PHOTOLUMINESCENCE Bi12GeO20 Mo： Bi12GeO20 thermally treated 

分 类 号：O734.1[理学—晶体学] TN304.12[电子电信—物理电子学]