垂直腔面发射半导体激光器的电、热和光波导特性  

Electrical,Thermal and Optical-Waveguiding Characteristics of Vertical-Cavity Surface-Emitting Lasers

作　　者：赵一广[1] 张宇生[1] 黄显玲 

机构地区：[1]北京大学物理系

出　　处：《Journal of Semiconductors》1999年第11期963-970,共8页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文采用求光场方程、载流子扩散方程、热导方程以及泊松方程自洽解的方法，研究了垂直腔面发射半导体激光器的电、热和光波导特性．计算结果表明，出射窗口半径和限制区的深度、厚度以及半径是影响其注入电流和电压分布的主要因素．在不同的深度，电流和电压的分布是不同的．因而电流的分布不是一个固定的模式．对于较大出射窗口的垂直腔面发射半导体激光器，有源区的电流密度分布不均匀是引起高阶横模的主要原因．Using a method of finding self\|consistent solution for the carrier\|diffusion,optical\|field,thermal\|conduction and Poisson's equations,and of the calculation beginning from the electrode voltage,we have studied the electrical,thermal and optical\|waveguiding characteristics of gain\|guided vertical\|cavity surface\|emitting lasers (VCSELs).The calculated results show that the injected\|current and voltage distributions in gain\|guided VCSELs are determined by the laser window and confined\|layer apertures,and by the confined\|layer depth and thickness;previous model using a fixed current distribution has larger deviation from the actual situation.At different depths in device,the current and voltage distributions along the r direction is different.For a VCSEL with larger window and confined\|layer apertures,the current\|density distribution in the active region is ununiform causing high\|order transverse mode at high injected current.The position of the confined layer plays an important role in determining the current spreading.

关 键 词：半导体激光器 电特性 热特性 光波导特性 VCSELS 

分 类 号：TN248.4[电子电信—物理电子学]