高频异质结晶体管直流和交流模型及其验证  

DC-AC Models and Verification of High-Frequency HBT

作　　者：高金明[1] 李垚[1] 

机构地区：[1]中国科技大学微电子实验室,合肥230026

出　　处：《电子器件》2011年第2期132-136,共5页Chinese Journal of Electron Devices

基　　金：安徽省自然科学基金项目(090412029)

摘　　要：针对漂移扩散方程和能量平衡方程的解建立了SiGe HBT的直流和交流理论模型,综合考虑了速度饱和效应、基区和发射区的禁带变窄效应和复合效应,并与台面型SiGe HBT实验结果进行了比较,截止频率为10.5 GHz,电流增益为45,与理论结果基本符合。Based on drift-diffusion equation and energy balance equation,a SiGe HBT DC and AC model was established.In addition,the velocity saturation effect,base and mitter bandgap narrowing effect and the recombination effect are included.Finally,the theory and mesa-type SiGe HBT experiment results were compared,the cut-frequency is 10.5 GHz,the current gain is about 45,the theoretical results are consistent with experiment results.

关 键 词：SIGE HBT 漂移扩散模型 波尔兹曼模型 电子温度 复合效应 速度饱和效应 

分 类 号：TN321[电子电信—物理电子学]