基于PLD法制备的MgZnO薄膜紫外传感器的研究  

UV Detector Based on MgZnO Films Prepared by PLD Method

作　　者：胡居广[1,2] 刁雄辉[1] 李学金[1,2] 林晓东[1,2] 李佑国[1] 刘毅[1] 龙井华[1] 李启文[1] 

机构地区：[1]深圳大学物理科学与技术学院,广东深圳518060 [2]深圳市传感器技术重点实验室,广东深圳518060

出　　处：《传感技术学报》2011年第3期330-335,共6页Chinese Journal of Sensors and Actuators

基　　金：深圳市传感器技术重点实验室开放基金项目(SST200902)

摘　　要：用KrF准分子脉冲激光沉积(PLD)法,以石英为衬底,在300℃～600℃制备了MgZnO薄膜。由拉曼光谱仪、AFM、UV/vis分光光度计对薄膜进行表征,结果表明,在600℃制备薄膜有最大的禁带宽度3.78 eV,以及最好的结晶质量。在此薄膜上镀上Al电极制备紫外传感器,测量了传感器的的I-V曲线、光谱响应特性,以及在365 nm紫外光辐照下的时间响应特性。传感器波长响应峰值在约320 nm;上升时间常数为9.1 ms,下降时间常数为16.5 ms。MgZnO films were prepared with KrF excimer pulsed laser deposition（PLD）method on quartz substrate at 300 ℃~600 ℃.Films were characterized using Raman spectroscopy,AFM,and UV/Vis spectrophotometer.The results show that the film prepared at 600 ℃ has the largest band gap of 3.78 eV,and best crystal quality.Al electrode was deposited on the film to make a UV sensor.I-V curve,spectral response and time response under 365 nm UV irradiation characteristics were detected.The results show that,the response peak is at about 320 nm,the rising response time constant is 9.1 ms,falling time is 16.5 ms.

关 键 词：紫外探测器 MgZnO薄膜 温度 脉冲激光沉积 

分 类 号：TN364.2[电子电信—物理电子学]