MOD法在LaAlO_3单晶上沉积La_(0.4)Sr_(0.6)CoO_3导电缓冲层  

MOD Method Used for Conductive La_(0.4)Sr_(0.6)CoO_3 Buffer Layers Deposition on LaAlO_3 Single Crystal Substrates

作　　者：李英楠[1] 李凤华[1] 沈悦[1] 樊占国[1] 李成山[2] 卢亚峰[2] 

机构地区：[1]东北大学,辽宁沈阳110004 [2]西北有色金属研究院,陕西西安710016

出　　处：《稀有金属材料与工程》2011年第4期685-688,共4页Rare Metal Materials and Engineering

基　　金：国家科技部"863"项目(2008AA03Z202);国家自然科学基金青年基金项目(50702012);辽宁省博士启动基金(20071017)

摘　　要：用金属有机物沉积(MOD)法在LaAlO3(100)单晶基底上制备了立方钙钛矿型导电缓冲层La0.4Sr0.6CoO3(LaSrCoO)薄膜。根据热分析曲线确定前驱膜的热处理工艺,其中前驱膜的热分解温度为620～800℃,涂膜的结晶温度为825℃。由X射线衍射(XRD)分析可知,热处理后涂膜的主相是LaSrCoO,其择优取向为<100>;另外还有La2CO5和LaCoO3等杂相。由φ扫描和(100)极图可知,所制备的涂膜有较强双轴织构。用标准四引线法测量了涂膜的室温和低温电阻率,在77K时达到1.04×10-4?·m,实现了沉积导电缓冲层的目的。Conductive La0.4Sr0.6CoO3 （LaSrCoO） buffer layers with cubic-perovskite structure were prepared on LaAlO3（100） single crystal substrates by the metal organic deposition （MOD） process. The heat-treatment process was designed according to the differential thermal analysis and thermogravimetric analysis, in which the thermolysis temperature of the precursor layer is 620-800 oC and the crystallization temperature of the buffer layer is 825 oC. According to X-ray diffraction （XRD） analysis, the main phase is LaSrCoO with 100 preferred orientation after heat treatment; in addition, impurity phases are La2CO5 and LaCoO3. The LaSrCoO buffer layers have the strong biaxial texture by φ-scan and （100） polar figure. The resistivity of the buffer layers was measured by standard four-probe DC method from room-temperature to liquid-N2 temperature, and the result show that its resistivity is 1.04×10-4 Ω·m at 77 K, achieving the purpose of conductive buffer layer deposition.

关 键 词：导电缓冲层 La0.4Sr0.6CoO3(LaSrCoO) 立方织构 

分 类 号：TB43[一般工业技术]