铜掺杂氧化锌薄膜的阻变特性  

Resistive switching characteristics of Cu-doped ZnO thin films

作　　者：董清臣[1] 贾彩虹[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院光伏材料省重点实验室,河南开封475004

出　　处：《电子元件与材料》2011年第5期18-22,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.60976016)

摘　　要：采用脉冲激光沉积法在SnO2:F(FTO)衬底上制备了单一c轴取向生长的ZnO和ZnO:Cu薄膜,并对具有Au/ZnO/FTO和Au/ZnO:Cu/FTO三明治结构的器件进行了阻变特性测试。结果显示:两种器件在室温电场作用下均显示出双极可逆变阻特性;Cu掺杂使ZnO薄膜的开关比大幅增加,电流–电压曲线拟合结果显示这是由Schottky结界面机制产生的高低阻态引起的。ZnO and ZnO：Cu thin films preferentially growing in c-axis orientation were deposited on SnO2：F（FTO） substrates by pulsed laser deposition.The resistive switching behaviors of the devices with Au/ZnO/FTO and Au/ZnO：Cu/FTO sandwich structures were studied.The results show that,when electric field is applied at room temperature,both kinds of devices show a bipolar reversible resistive switching characteristic.Cu doping significantly increases the on/off ratio of ZnO films.This can be attributed to the high and low resistance states induced by the mechanism of Schottky junction interface.

关 键 词：电阻开关 脉冲激光沉积 铜掺杂氧化锌 Schottky结界面势垒 

分 类 号：O484.4[理学—固体物理]