Pd掺杂SnO_2气敏薄膜XPS分析及其气敏性能研究  

XPS analysis and gas sensing properties of Pd doped SnO_2 films

作　　者：高兆芬[1] 李辉[2] 徐甲强[3] 曾宇平[4] 

机构地区：[1]上饶师范学院化学系,江西上饶334001 [2]上海大学理学院物理系,上海200444 [3]上海大学理学院化学系,上海200444 [4]中国科学院上海硅酸盐研究所,上海200050

出　　处：《电子元件与材料》2011年第5期26-30,共5页Electronic Components And Materials

基　　金：上海市教委纳米材料化学重点学科资助项目(No.J50102)

摘　　要：分别在氧气和氩气气氛下,于纯SnO2气敏薄膜上溅射金属Pd制备了Pd掺杂SnO2气敏薄膜。利用XPS分析了溅射气氛和老化处理对该气敏薄膜表面元素含量变化的影响。结果表明:溅射气氛和老化处理对气敏薄膜的表面吸附氧含量和其他元素的含量均有很大影响,如氩气气氛下制备的Pd/SnO2气敏薄膜在老化前与400℃/2 h老化后的表面吸附氧原子的摩尔比为11.632 9:4.341 6。Pd掺杂SnO2气敏元件的灵敏度比未掺杂的元件灵敏度提高数十倍。最后对气敏元件的敏感机理进行了探讨。Pd doped SnO2 gas sensing films were prepared by DC-sputtering in oxygen and argon atmosphere,respectively.X-ray photoelectron spectrum（XPS） was employed to investigate the effects of sputtering atmosphere and aging treatment on the element contents on the surface of prepared gas sensing films.The results indicate that the sputtering atmosphere and the aging treatment show great effects on the contents of surface absorbing oxygen and other elements on the surface of prepared gas sensing films.For instance,the mole ratio of surface absorbing oxygen atom of Pd/SnO2 gas sensing films prepared in argon atmosphere before and after aging in air at 400 ℃ for 2 h is 11.632 9 to 4.341 6.The sensitivity of the Pd doped SnO2 gas sensing film is higher than that of pure SnO2 gas sensing films for several decade times.The gas sensing mechanism of the Pd doped gas sensors were also discussed.

关 键 词：薄膜 电导 气敏 二氧化锡 灵敏度 

分 类 号：TN304.92[电子电信—物理电子学]