离子刻蚀工艺对聚合物阵列波导光栅理论模拟的影响  

Effect of reactive ion etching process on simulation of polymeric arrayed waveguide grating multiplexers

作　　者：秦政坤[1,2] 贺飞[1] 刘春玲[1] 马春生[2] 

机构地区：[1]吉林师范大学信息技术学院,吉林四平136000 [2]吉林大学集成光电子学国家重点联合实验室,长春130012

出　　处：《吉林大学学报（工学版）》2011年第3期791-794,共4页Journal of Jilin University:Engineering and Technology Edition

基　　金：国家自然科学基金项目(60576045);'863'国家高技术研究发展计划项目(2001AA312160)

摘　　要：选用五氟苯乙烯与甲基丙烯酸环氧丙酯(PFS-co-GMA)的共聚物作为波导材料,运用铝掩膜结合反应离子刻蚀(RIE)技术的方法,设计并制备了阵列波导光栅(AWG)波分复用器件。在制备过程中,由于侧向的刻蚀作用难以得到规则的矩形截面,得到的是梯型截面。针对该工艺水平和梯形截面波导的特点,提出了梯形截面波导等效能流分析方法。实验测试和分析结果表明:初始设计AWG器件的中心波长为1550.918nm,制作的器件实际中心波长为1550.826nm,传输光谱的漂移为0.092nm。而等效能流分析方法得到的AWG器件的中心波长为1550.872nm,传输光谱的漂移为0.046nm。该方法与实验测试结果吻合得更好。A polymer Arrayed Waveguide Grating （AWG） multiplexer has been designed and fabricated by using the poly （2, 3, 4, 5, 6-pentafluorostyrene-co-glycidylmethacrylate） （PFS-co-GMA）. In the fabrication of the polymeric AWG device, the cross of the channels and the arrayed waveguides exhibit smooth trapezoid cross-sections instead of originally designed rectangular ones after the reactive ion etching. In this paper, for the technological level and the characteristics of the trapezoid cross-sections, a new analysis method, referred as equivalent energy flow method, is presented for analyzing the transmission characteristics of AWG. The central wavelength of the device originally designed is 1 550. 918 nm, and the measured central wavelength is 1 550. 826 nm, the spectral shift is 0. 092 nm. By using this technique, the computed results show that the spectral shift is 1 550. 872 nm, the spectral shift is reduced to 0. 046 nm. This indicates that the proposed equivalent energy flow method has satisfactory accuracy and reasonability

关 键 词：光电子技术 集成光学 阵列波导光栅 梯型截面 光谱漂移 等效能流 

分 类 号：TN252[电子电信—物理电子学] TN256