自支撑聚酰亚胺/锆膜的制备及性能改善  

Preparation and characterization of free-standing polyimide/Zr film

作　　者：伍和云[1] 吴永刚[1] 吕刚[1] 凌磊婕[1] 夏子奂[1] 刘仁臣[1] 唐平林[1] 

机构地区：[1]同济大学物理系,上海200092

出　　处：《强激光与粒子束》2011年第4期981-984,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(60977028);上海市基础重点研究课题(09JC1413800)

摘　　要：采用直流磁控溅射法制备自支撑锆(Zr)膜,采用二步法制备聚酰亚胺(PI)膜,在Zr膜表面沉积PI膜得到自支撑PI/Zr复合膜。均苯四甲酸酐(PMDA)和二甲基二苯醚(ODA)在二甲基乙酰胺(DMAC)中反应得到聚酰胺酸(PAA),然后PAA高温亚胺化得到PI;PI成膜时采用提拉法成膜。经国家同步辐射实验室计量线站测定,实际测量结果与理论分析一致,PI膜的引入虽然会导致自支撑薄膜透过率有所下降,但在类镍-银软X射线13.9 nm波段PI(200 nm)/Zr(300 nm)和PI(200 nm)/Zr(400 nm)自支撑薄膜的透过率仍然分别达到14.9%和7.5%。Free-standing Zr film was prepared through direct-current magnetron sputtering.Polyimide（PI） film was prepared by a two-step process： After fully reaction between PMDA and ODA in DMAC,polyamic acid was produced;PI film was prepared when polyamic acid was thermally imidized.PI/Zr film was prepared through dip-coating PI film on Zr film.Based on the testing result from metrology beam-line station of National Synchrotron Radiation Center of University of Science and Technology of China,real transmittance fits with theoretical analysis fairly well.Although transmittance declines because of PI film,the Ni-like Ag soft X-ray transmittance of PI（200 nm）/Zr（300 nm） and PI（200 nm）/Zr（400 nm） films reaches 14.9% and 7.5% respectively at 13.9 nanometer.

关 键 词：自支撑薄膜 聚酰亚胺 聚酰胺酸 二步法 亚胺化 质量吸收系数 

分 类 号：O614.412[理学—无机化学]