国外红外光电探测器发展动态  

Status and trends of foreign infrared photodetectors

作　　者：刘武[1] 叶振华[2] 

机构地区：[1]北京系统工程研究所,北京100080 [2]中科院上海技术物理研究所,上海200083

出　　处：《激光与红外》2011年第4期365-370,共6页Laser & Infrared

摘　　要：主要综述三代红外光电探测器的材料体系与研究现状,以及分析红外光电探测器的未来发展趋势。首先,简述红外光电探测器及其三个发展阶段。然后,论述适于三代红外光电探测器发展的碲镉汞(HgCdTe)、量子阱光探测(QWIPs,quantum-well photodetectors)、二类应变超晶格(SLS,type-Ⅱstrained-layer superlattices)和量子点红外光探测(QDIPs,quantum dot IR photodetectors)四个材料体系,以及介绍它们在三代红外光电探测器方面的研究进展。最后,分析未来红外光电探测器的材料选择及发展趋势。This paper summarizes material system and status of third-generation Infrared photodetector arrays,and then analyzes the trend of infrared photodetectors.Firstly,infrared photodetector and its three main stages are introduced briefly.It is followed by discussions the material system and their progress of third-generation infrared photodetector arrays with HgCdTe photodiodes,quantum-well photoconductors,type-Ⅱ strained-layer superlattices and quantum dot IR photodetectors.This paper also presents the new material choices and the trends of third-generation Infrared photodetector arrays.

关 键 词：三代 红外 光电探测器 双色/多色 

分 类 号：TN215[电子电信—物理电子学]