掺质KTP型晶体生长与性能研究  

Study on Growth and Properties of Doped KTP Type Crystals

作　　者：张克从[1] 龚亚京[1] 王希敏[1] 

机构地区：[1]北京工业大学环境与能源工程学院,北京100022

出　　处：《人工晶体学报》1999年第4期314-322,共9页Journal of Synthetic Crystals

基　　金：国家自然科学基金

摘　　要：采用高温溶液法生长了含掺质离子Ｚｒ４ ＋ ，Ｇａ３ ＋ 的单掺和双掺系列ＫＴＰ型晶体。晶体生长过程中发现Ｇａ 掺入溶液后，体系更加稳定，容易生长出光学质量的晶体；而Ｚｒ 掺入溶液后体系稳定性降低，晶体生长较困难。用等离子体发射光谱测定了各掺质离子在晶体中的含量，计算出掺质离子的分配系数，发现生长体系中Ｇａ 无论是在高掺入量还是低掺入量的情况下，Ｇａ 在晶体中的含量都十分稳定。测定了晶体的晶胞参数、紫外可见红外吸收光谱，测定的结果发现，晶胞参数均变化不大，在吸收光谱中Ｇａ∶ＫＴＰ在可见光谱区有少量的光吸收，而Ｚｒ∶ＫＴＰ晶体是无色透明的。通过粉末倍频实验发现，Ｚｒ 的掺入有助于晶体倍频转换效率的提高。通过晶体ｃ 轴向离子电导率的测试发现，Ｇａ 的掺入使ｃ 轴向电导率降低了大约３ 个数量级。双掺Ｚｒ 和Ｇａ 的晶体是性能更为优良的掺质ＫＴＰ型晶体。In this paper,a series of Zr,Ga single doped KTP crystals as well as double doped KTP crystals have been grown by high temperature solution method.Doping with Ga 3+ ions show positive effects on the stability of growth system.Optical quality single crystals are easy to obtain by doping with Ga 3+ whereas Zr ions damage the stability of system and Zr∶KTP crystal is difficult to be grown.Distribution coefficient of the doping ions is calculated after the dopant concentration in crystal was probed out.Ga 3+ ion concentration in crystal remains stable in spite of which in solution varies drastically.The lattice parameters and ultraviolet visible infrared absorption spectra have been determined.All the lattice parameters of doped crystals change little comparing with that of pure KTP crystal.Doping with Ga 3+ introduced weak absorption bands in the visible region while Zr 4+ ions doped crystals are colorless.SHG measurements on powder and ions conductivity measurements along c axis have been performed.The Zr doped crystals lead to an improved SHG intensity and the conductivity along c axis has been lowered by three orders of magnitude by doping with Ga 3+ ions.In conclusion,we find that Zr and Ga double doped KTP crystal is a promising NLO material combining both improved properties mentioned above.

关 键 词：KTP晶体 非线性光学晶体 掺质 溶液法 晶体生长 

分 类 号：TN204[电子电信—物理电子学] O782.1[理学—晶体学]