高灵敏度光伏硅杂质元素分析仪的研制  

Application of SoG-Si Impurities Analyzer in SoG-Si

作　　者：宁方敏[1] 邬旭然[2] 田宇纮[1] 徐惠忠[1] 

机构地区：[1]烟台大学环境与材料工程学院,山东烟台264005 [2]烟台大学化学生物理工学院,山东烟台264005

出　　处：《烟台大学学报（自然科学与工程版）》2011年第2期136-140,共5页Journal of Yantai University(Natural Science and Engineering Edition)

基　　金：山东省自然科学基金资助项目(Y2008E05)

摘　　要：光伏硅杂质元素分析仪是基于能量色散谱仪的工作原理,研制开发的由硅漂移探测器和数字脉冲处理器以及双靶激发系统组成的X荧光类分析仪.仪器的性能测试中:能量线性偏差为0.23%,相对极差为0.06%,相对标准偏差为0.59%,同时探测器的能量分辨率为130 eV,均可证明满足光伏硅中Cr、V、Mn、Co、Ni、Fe等杂质元素的定量分析要求.同时,用该系统对某公司生产的光伏硅材料进行测试,结果与ICP-AES测试结果相吻合.The solar-grade silicon impurities element analyzer is a X-fluorescence analyzer based on the principle of the energy dispersive X-Ray fluorescence,which is composed of silicon drift detector and digital pulse processor as well as double-target activation system.In the performance measurement of solar-grade silicon impurities element analyzer,the energy deviation is 130 eV,the relative range is 0.06%,the relative standard deviation is 0.59%,and the full width at half maximum of the silicon drift detector is 130 eV.It is demonstrated that the solar-grade silicon impurities element analyzer can meet the requirements of solar-grade silicon.Also,the measurement of solar-grade silicon is accordance with the inductively coupled plasma mass spectrometry.

关 键 词：元素分析仪 X荧光分析仪 光伏硅 硅漂移探测器 数字脉冲处理器 

分 类 号：TH842[机械工程—仪器科学与技术]