SiN_x∶H/Al复合膜层在背点接触太阳电池中的应用  

APPLICATION OF SiN_x:H/Al COMPOSITE LAYER TO CRYSTALLINE SILICON SOLAR CELL

作　　者：陈达明[1] 梁宗存[1] 沈辉[1] 杨灼坚[1] 梁学勤[1] 邹禧武[1] 

机构地区：[1]中山大学太阳能系统研究所,广州510006

出　　处：《太阳能学报》2011年第4期472-475,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(60876044);广东省科技计划(2007A010700002)

摘　　要：尝试将SiNx∶H/Al复合膜层应用到晶体硅太阳电池的背部结构上。首先利用PECVD在硅片背面沉积一层SiNx∶H薄膜,然后在SiNx∶H薄膜上丝网印刷Al层,构成SiNx∶H/Al复合膜层。研究了具有SiNx∶H/Al复合膜层结构的硅片的光学内背反射性能,测得其内背反射率达88.9%。并从理论上设计出基于SiNx∶H/Al复合膜层的背点接触太阳电池最优结构,并从实验上制备出这种背点接触太阳电池,初期效率达12.36%。最后,提出了背点接触太阳电池工艺的改进方案。SiNx：H/Al composite layer was applied to the rear structure of crystalline silicon solar cell. First of all, SiNx ：H thin layer was deposited on the rear side of silicon wafer, and then, AI layer was screen printed on the top of SiNx thin film layer, and formed SiNx：H/Allayer. The internal mflectivity of rear side SiNx：H/Al composite layer was investigated, which reached up to 88.9%. And the optimized structure of back point contact solar cell based on SiNx：H/Al composite layer was designed theoretically. This kind of back point contact solar cell had been fabricated experimentally, and the efficiency had reached to 12.36%. Finally, the optimized method for back point contact solar cell technology was proposed.

关 键 词：SiNx:H/Al复合膜层 丝网印刷 内背反射率 背点接触太阳电池 

分 类 号：TK514[动力工程及工程热物理—热能工程]