化学气相沉积法制备Sn_2S_3一维纳米结构阵列  

Preparation of Sn_2S_3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition

作　　者：彭跃华[1] 周海青[1] 刘湘衡[1] 何熊武[1] 赵丁[1] 海阔[1] 周伟昌[1] 袁华军[1] 唐东升[1] 

机构地区：[1]湖南师范大学低维量子结构与调控教育部重点实验室,物理与信息科学学院,长沙410081

出　　处：《物理化学学报》2011年第5期1249-1253,共5页Acta Physico-Chimica Sinica

基　　金：教育部新世纪优秀人才支持计划(NCET-07-0278);湖南省杰出青年基金(08JJ1001);湖南省自然科学基金(07JJ6009);湖南师范大学青年优秀人才培养计划(070623)资助~~

摘　　要：运用化学气相沉积法(CVD),直接以Sn和S为原料分区加热蒸发,通过控制温度分布、气压、载气流量和金属铅纳米颗粒分布等宏观实验条件,成功制备大面积Sn2S3一维纳米结构阵列.扫描电子显微镜(SEM)图片显示:Sn2S3一维纳米结构的横向尺度在100nm左右,长约几个微米.X射线衍射(XRD)谱显示:所制备样品的晶体结构属于正交晶系,沿[002]方向生长.紫外-可见漫反射谱表明Sn2S3一维纳米结构是带隙为2.0eV的直接带隙半导体.讨论了温度分布和金属铅纳米颗粒对Sn2S3一维纳米结构生长的影响,并指出其生长可能遵循气-固(V-S)生长机理.We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition （CVD）. Scanning electron microscopy （SEM） showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction （XRD） results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002] direction. Ultraviolet-visible （UV-Vis） diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn2S3 nanowires is governed by the vapor-solid （V-S） growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.

关 键 词：一维纳米结构 阵列 化学气相沉积法 三硫化二锡 气-固生长机理 

分 类 号：TB383.1[一般工业技术—材料科学与工程]