3D IC受热载荷作用下的数值模拟  

A Finite Element Simulation for 3D-IC under Thermal Loads

作　　者：杜秀云[1,2] 唐祯安[1] 

机构地区：[1]大连理工大学电子信息工程学院,辽宁大连116024 [2]辽宁师范大学物理与电子技术学院,辽宁大连116029

出　　处：《中国集成电路》2011年第4期44-47,55,共5页China lntegrated Circuit

基　　金：国家自然科学基金重点项目(90607003)

摘　　要：针对基于硅通孔技术的3DIC在工作过程中的受热问题,利用热弹性力学理论建立了三维有限元数值模拟分析模型,对结构进行了热分析,同时探讨了器件由此产生的热应力。计算结果表明,由芯片到底面的热通路为散热的主要通道,其它表面的对流条件对热场分布影响不大;芯片与通孔接触面的边角处有应力集中,在热载荷的长期、交变作用下容易发生开裂、失效。3D finite element simulation models have been established for through silicon via structures of 3D integrated circuits. Based on the heat dissipation of working process, the temperature field and the thermal induced stresses of 3D IC structures are obtained by thermal simulation analysis. The numerical results indicate that the heat path from chip to the bottom surface is the main way for the heat dissipation, while the convection coefficient applied on the other outer surface has little effect on the temperature distribution. The stress concentration occurs in the interface between the Si and the Cu vias. They are easier to crack under long-term alternating thermal loads.

关 键 词：3D 热应力 温度场 有限元 硅通孔 

分 类 号：TN43[电子电信—微电子学与固体电子学]