Preparation of BST nanocrystals embedded in SiO_2 film by magnetron sputtering for nonvolatile memory applications  

作　　者：WANG Li SUN HongFang ZHOU HuiHua ZHU Jing 

机构地区：[1]Beijing National Center for Electron Microscopy, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Chinese Science Bulletin》2011年第11期1139-1141,共3页

摘　　要：We develop a method that uses magnetron sputtering to fabricate barium strontium titanate (BST) nanocrystals embedded in dielectric SiO2 films.Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film.In addition,we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy.We develop a method that uses magnetron sputtering to fabricate barium strontium titanate （BST） nanocrystals embedded in die- lectric SiO2 films. Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film. In addition, we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy.

关 键 词：SIO2薄膜 纳米晶体 磁控溅射 BST 嵌入式 非易失性 SI02 透射电子显微镜 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O484.1[自动化与计算机技术—计算机科学与技术]