表面注入D-RESURF器件耐压模型  

Breakdown Voltage Model for D-RESURF Devices with Surface Implantation

作　　者：李琦[1] 王卫东[1] 张杨[1] 张法碧[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《半导体技术》2011年第5期348-351,共4页Semiconductor Technology

基　　金：广西自然科学基金(2010GXNSFB013054);广西千亿元产业重大科技攻关工程项目(1114001-10F);桂林电子科技大学博士科研启动基金(UF08021Y)

摘　　要：建立表面注入双重降低表面电场(D-RESURF)结构击穿电压模型。D-RESURF器件在衬底纵向电场和Pb区附加电场的影响下,漂移区电荷共享效应增强,优化漂移区掺杂浓度增大,器件导通电阻降低。分析漂移区浓度和厚度对击穿电压的影响,获得改善击穿电压和导通电阻折中关系的途径。在满足最优表面电场和完全耗尽条件下,导出吻合较好的二维RESURF判据。在理论的指导下,成功研制出900 V的D-RESURF高压器件。An analytical model for the breakdown voltage of double RESURF（D-RESURF） devices with a surface implanted P-top region was presented.The optimal doping concentration in drift region was increased and the on-resistance was decreased by electric field modulation of the Pb region.The dependence of breakdown voltage on structure parameters of the device was calculated.An effective way to improve the trade-off between the breakdown voltage and on-resistance was also proposed.A 2-D RESURF condition was obtained and all analytical results were well verified by simulation results and previous experimental data,showing the validity of the model presented here.A 900 V double RESURF device was produced under the guide of the proposed model.

关 键 词：表面注入 双重降低表面电场 模型 击穿电压 导通电阻 

分 类 号：TN386.1[电子电信—物理电子学]