离子辐照引起Eu掺杂氧化镁的发光特性  

Photoluminescence of Eu-Doped MgO Irradiated with Xe Ions

作　　者：宋银[1,2] 张崇宏[1,2] 杨义涛[1,2] 李炳生[1,2] 马艺准[1,2] 缑洁[1,2] 姚存峰[1,2] 贺德衍[1,2] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000 [2]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《激光与光电子学进展》2011年第5期100-103,共4页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(10705037;10975165)资助课题

摘　　要：利用320 kV高压综合实验平台,通过6 MeV Xe离子辐照Eu掺杂氧化镁（MgO）单晶样品对其光致发光现象进行了研究。Xe离子辐照后,样品380-550 nm的发光带出现先减弱后增强的现象,400-450 nm处出现了平坦的较宽的蓝色发光带,经拉曼光谱和红外光谱的综合分析可知离子辐照能够使掺杂的Eu很好的进入晶体内部形成稳定的缺陷类型,产生更好的发光效果。Eu-doped MgO single crystals irradiated with 6 MeV Xe ions using 320 kV high voltage experimental platform are investigated by fluorescence spectroscopes. Photoluminescence （PL） intensity of Eu-doped MgO becomes stronger than that of MgO. PL peaks located at 380 - 550 nm decrease in PL spectra of Eu-doped MgO irradiated with small dose, the intensity of the emission band becomes strong when irradiation dose increases up to 5 × 1015/cm2. Those photoluminescence phenomena are explained by Fourier transform infrared spectra and Raman spectra.

关 键 词：光谱学 重离子辐照 稀土掺杂发光 光致发光(PL)光谱 

分 类 号：O433.4[机械工程—光学工程]