利用高速GaAs光电导开关实现腔倒空激光脉冲输出  

Cavity Dumped Laser Using Fast GaAs Photoconductive Switch

作　　者：朱少岚[1,2] 赵卫[1] 刘百玉[1] 施卫[3] 杨延龙[1,2] 

机构地区：[1]中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119 [2]中国科学院研究生院,北京100049 [3]西安理工大学应用物理系,陕西西安710048

出　　处：《中国激光》2011年第5期18-22,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(60878060)资助课题

摘　　要：腔倒空技术是一种有效产生大能量、短脉冲激光输出的调Q技术,其产生的Q开关激光脉冲的宽度主要由谐振腔腔长决定。大孔径半绝缘GaAs光电导开关(PCSS)是一种可耐高压的光控开关,具有响应速度快、时间抖动小、耐压高、暗电阻大、导通电阻小等特点,将其直接作为控制腔倒空激光器的光反馈回路和高电压开关,在腔长为20 cm的氙灯抽运Nd∶YAG电光调Q激光器上实现了激光波长1064 nm、单脉冲能量15 mJ、脉冲半峰全宽(FWHM)为1.7 ns的腔倒空激光脉冲稳定输出,脉冲宽度峰峰值抖动优于7%,能量峰峰值抖动优于3%。Cavity dumping is an effective technique for generating Q-switched laser pulses of relatively large energy and extremely short time duration, and the width of Q-switched pulses is primarily a function of the oscillator cavity length. The solid state lateral semi-insulating GaAs photoconductive semiconductor switch （PCSS） has the unique ability to handle high power at very fast response time with very little timing jitter. A novel and effective technique of cavity dumping laser for generating short Q-switched laser pulses with a GaAs PCSS is presented. In a flashlamp pumped Nd： YAG laser with 20 cm long stable resonator, 1.7 ns short laser pulses have been obtained, and the pulse to pulse duration instability is less than 7 % and energy instability is less than 3 %.

关 键 词：激光技术 电光调Q 腔倒空 稳定腔 GAAS光电导开关 ND:YAG激光器 

分 类 号：TN248.1[电子电信—物理电子学]