周期换向脉冲电沉积-硒化法制备铜铟镓硒薄膜  

Formation of CuIn_xGa_(1-x)Se_2 Films by Pulse-reverse Electrodeposition Technique

作　　者：曹洁[1] 曲胜春[1] 刘孔[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2011年第2期187-194,共8页Journal of Functional Materials and Devices

基　　金：973(2010CB933800);国家自然科学基金(60736034 and 5099006)

摘　　要：采用周期换向脉冲电沉积法于Mo/玻璃及ITO/玻璃衬底上制备铜铟镓硒薄膜。Mo/玻璃或ITO/玻璃为工作电极,饱和甘汞(SCE)为参比电极,大面积铂片作为阳极构成三电极体系,以氯化铜,三氯化铟,三氯化镓和亚硒酸的水溶液为电解液,制备Cu-In-Ga-Se合金预制膜,随后在硒蒸气中进行硒化处理,得到了黄铜矿结构的CuInGaSe2(CIGS)薄膜.分别用SEM,XRD和UV-吸收分析了合金预制膜和CuInGaSe2薄膜的表面形貌、相组成及紫外-可见吸收特性。结果表明,周期换向脉冲电沉积法可以制备表面平整、均匀致密的Cu-In-Ga-Se合金薄膜;利用脉冲电压的占空比可以提高预制膜中的In元素的比例,且随着In含量的增加,CIGS薄膜的结晶性变好;适当延长硒化退火的时间,可以使薄膜晶粒大小均匀,减小内应力,使薄膜的光吸收率提高,以利于制备更高效率的CIGS薄膜太阳电池.CuInxGa1-xSe2 polycrystalline thin films were synthesized on molybdenum substrate by the pulse-reverse electrodeposition technique in this study.CuInxGa1-xSe2 films were electrodeposited from aqueous solution,containing CuCl2,InCl3,GaCl3,H2SeO2,Na-citric,and LiCl,on Mo/Glass substrate under pulse potentials with different amplitude and duration time.The electrodeposited films were characterized by X-ray diffractometer（XRD）,scanning electron microscopy（SEM） and energy dispersive X-ray analysis（EDS）.The results revealed that thin films fabricated by the pulse-reverse electrodeposition technique can fabricate a chalcopyrite structure,with dense and smooth morphological features;the proportion of metal ion In3＋ and crystallizability increase along with the increase of the reverse potential,and the films become stack and homogenous.Extending the annealed time of the CuInxGa1-xSe2 precursor is beneficial to get homogeneous films with higher light absorption as the absorber layer for solar cells.

关 键 词：周期换向脉冲 电沉积 CIGS薄膜 太阳电池 

分 类 号：O64[理学—物理化学]