实验研究光谱非相关激光辐照下光伏型HgCdTe探测器芯片前后表面的温升  

The Experimental Research of Temperature Rise of the Fore and After Surface of the Chip of Photovoltaic HgCdTe Detector Irradiated by Spectral Unrelated Laser

作　　者：江天[1,2] 程湘爱[1] 李莉[1] 郑鑫[1] 江厚满[1] 陆启生[1] 田宏[3] 卞静[3] 

机构地区：[1]国防科技大学光电科学与工程学院 [2]95844部队 [3]光电信息控制和安全技术重点实验室

出　　处：《国防科技大学学报》2011年第2期9-12,共4页Journal of National University of Defense Technology

基　　金：国家部委基金资助项目(1030110)

摘　　要：为了研究光谱非相关激光辐照下探测器芯片前后表面温度变化规律,通过铂电阻测温的方法,测量了芯片后表面的温度变化规律。通过标定芯片前表面结电场分离电子-空穴对能力随温度变化的关系,利用组合激光的实验方法测量了光谱非相关激光辐照过程中芯片前表面的温度变化规律。研究表明,光谱非相关激光辐照过程中芯片前后表面都有温升,但后表面温度一直高于前表面温度。To study temperature variation of the detector chip irradiated by spectral unrelated laser,the platinum resistance thermometer is used to monitor temperature of the chip＇s back surface.The electron-hole pairs separative duty of the field in the junction depletion region is calibrated.The temperature of front chip surface is obtained by the experimental method of laser combination.It is found that both front and back chip surface have temperature rise,but the temperature of back chip surface is always higher than that of the front one in the irradiated process.

关 键 词：光谱非相关激光 光伏型HgCdTe探测器 温度场 

分 类 号：TN249[电子电信—物理电子学]