Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy  

作　　者：Gh.Sareminia F.Zahedi Sh.Eminov Ar.Karamian 

机构地区：[1]Electronic Component Industry(ECI)-Optoelectronic Industry,P.O.Box 19575-199,Tehran,Iran [2]Institute of Physics,Azerbaijan University,Baku,Azerbaijan [3]Department of Mathematics,Razi University,Kermansha,Iran

出　　处：《Journal of Semiconductors》2011年第5期146-148,共3页半导体学报（英文版）

摘　　要：The crystal structure of InSb [111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [1^-1^- 1^-] B contain two different crystallized directions and they have different physical and chemical properties. Experiments were carried out on the InSb [ 111 ] A/B surfaces, showing that tartaric acid etchant could create a very smooth surface on the InSb [1^-1^- 1^-] B without any traces of oxides and etch pit but simultaneously create etch pit on InSb [ 111 ] A surfaces. After lapping and polishing, some particles remained on the InSb [1^-1^- 1^-] B surface, they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate, the growth layer was not uniform and some island-like regions were observed. The purpose of this work is to remove these particles on the lnSb [1^-1^- 1^-] B surface. Some morphology images of both surfaces, InSb [11 1] A/B, will be presented.The crystal structure of InSb [111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [1^-1^- 1^-] B contain two different crystallized directions and they have different physical and chemical properties. Experiments were carried out on the InSb [ 111 ] A/B surfaces, showing that tartaric acid etchant could create a very smooth surface on the InSb [1^-1^- 1^-] B without any traces of oxides and etch pit but simultaneously create etch pit on InSb [ 111 ] A surfaces. After lapping and polishing, some particles remained on the InSb [1^-1^- 1^-] B surface, they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate, the growth layer was not uniform and some island-like regions were observed. The purpose of this work is to remove these particles on the lnSb [1^-1^- 1^-] B surface. Some morphology images of both surfaces, InSb [11 1] A/B, will be presented.

关 键 词：cleaning lnSb LAPPING POLISHING InSb [1^-1^- 1^-] B 

分 类 号：TN304.054[电子电信—物理电子学]