MoO3和SiO2掺杂对Ce0.8ND0.2O1.9固体电解质结构和导电性能的影响  

Effects of MoO_3 and SiO_2-dopant on Sintering and Electrical Properties of Ce_(0.8)Nd_(0.2)O_(1.9) Solid Electrolytes

作　　者：赵桂春[1] 周德凤[1] 杨梅[1] 夏燕杰[2] 孟健[2] 

机构地区：[1]长春工业大学化学与生命科学学院,长春130012 [2]中国科学院长春应用化学研究所,稀土资源利用国家重点实验室,长春130022

出　　处：《无机化学学报》2011年第5期860-864,共5页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.20871023,20671088);吉林省科技发展计划(No.20070510,20101549)资助项目

摘　　要：采用溶胶-凝胶法合成高纯(<50 mg·kg-1 SiO2)Ce0.8Nd0.2O1.9(NDC)和SiO2含量为500 mg·kg-1的Ce0.8Nd0.2O1.9(NDCSi)体系,将1mol%MoO3分别加入到NDC和NDCSi体系,比较研究MoO3掺杂对体系微观结构和电性能的影响。通过X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征,交流阻抗(AC)分析仪测试材料的电阻。结果表明:MoO3和SiO2的加入均没有破坏体系的立方莹石结构;MoO3掺杂能提高NDC和NDCSi陶瓷材料的致密度,提高其晶界电导率和总电导率;MoO3掺入NDC体系具有烧结助剂的作用,掺入NDCSi体系既具有烧结助剂的作用,又具有晶界改善剂的作用。The Ce0.8Nd0.2O1.9（NDC）（50 mg·kg-1 SiO2） and 500 mg·kg-1 SiO2 of Ce0.8Nd0.2O1.9（NDCSi） with and without 1mol% MoO3 systems were prepared by the so-gel method.The characterizations of samples were investigated by X-ray diffraction（XRD）,field emission scanning electron microscopy（FE-SEM）,and AC impedance spectroscopy.The XRD results showed that these materials were single phases with a cubic fluorite-type structure.The addition of MoO3 improved the densification for NDC and NDCSi.The grain boundary and total conductivity of NDC and NDCSi with 1mol% MoO3 systems increased.Therefore,MoO3 should be considered to be not only an effective sintering aid,but also a new scavenger of the grain boundary for NDCSi.

关 键 词：MoO3掺杂 烧结助剂 晶界改善剂 电导率 

分 类 号：O614.33[理学—无机化学]