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作 者:郭立帅[1]
机构地区:[1]陇东学院物理与电子工程学院,甘肃庆阳745000
出 处:《应用光学》2011年第3期530-534,共5页Journal of Applied Optics
摘 要:基于传输矩阵法,数值研究了掺杂对一维光子晶体带隙特征的影响。研究表明:掺杂时,禁带中心会出现一导带,导带深度会随着掺杂位置、杂质折射率的变化而发生变化。当晶体结构给定时,总存在一个掺杂位置,使其禁带中心的导带深度达到最深;而对于给定的掺杂位置,当杂质折射率为某特定值时,禁带中心同样也会出现一个深度最深的导带,这种特性可应用于滤波器件和光学谐振腔的设计。Based on transfer matrix method,the effects of doping on one-dimensional photonic crystal are researched numerically.It is shown that in doped photonic crystal,there is a conduction band in the center of band gap,and the depth of conduction band varies gradually with the doping position and refractive index.When the crystal structure is given,there is always a doping position which makes the conduction band depth maximal in the center of band gap.When the doping position is given,there is always a specific value of impurity refractive index which makes the conduction band depth maximal in the center of band gap.These characteristics of one-dimensional photonic crystals are applied for the design of filters and optical resonators.
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