近规整多孔硅电化学制备与表征  

Fabrication and characterization of quasi-regular arranged porous silicon

作　　者：汪婷[1] 黎学明[1] 李武林[1] 文军[1] 

机构地区：[1]重庆大学化学化工学院,重庆400030

出　　处：《功能材料》2011年第5期869-871,876,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60871039);中央高校基本科研业务费重点资助项目(CDJXS10122217)

摘　　要：电化学阳极氧化条件对多孔硅孔排列的规整度有着显著的影响。提出了一种不需阳极氧化铝模板或预图案化而直接制备近规整多孔硅的电化学方法,分析了氧化时间、电解液组成、HF浓度对多孔硅形态的影响。结果表明,随着阳极氧化时间的增加,多孔硅孔的深度逐渐加大,孔径则呈先增大后稳定的趋势。当氢氟酸(40%)与N-N-二甲基甲酰胺(DMF)的质量分数为20∶80、电流密度为75mA/cm2、氧化时间为5min时,形成的多孔硅具有近规整的孔排列。形成的孔相互之间平行且垂直于样品表面,孔尺寸均匀一致,孔径在1μm左右,孔深度大约为20μm。The regularity of pore arrangements of porous silicon prepared by electrochemical process depends sensitively on the anodization parameters.In this work,self-assembly quasi-regular pore arrangements have been fabricated by electrochemical anodization without prestructuring or PAA template.Effect of electrolyte composition,HF mass fraction and anodization time on morphology of porous silicon is analyzed respectively.The result shows that the pore depth increases,the pore diameter increases firstly and then stable,with the increasing of anodizing time.When the mass fraction of HF and dimethylformamide is 20∶80,the current density is 75mA/cm2 and anodic oxidation time is 5min,the as-prepared porous silicon has quasi-regular pore arrangements,pores grow perpendicular to the surface and parallel to each other,they have almost the same size and depth.The pore diameter is about 1μm and pore depth being capable of reaching 20μm.

关 键 词：多孔硅 电化学阳极氧化 近规整 

分 类 号：TB303[一般工业技术—材料科学与工程]