CSS法制备CdZnTe薄膜时衬底温度的影响规律  

The effects of growth temperature on the properties of Cd_(1-x)Zn_xTe prepared by close-spaced sublimation

作　　者：袁妍妍[1] 介万奇[1] 高俊宁[1] 査钢强[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2011年第5期890-893,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50902113;50902114;50772091)

摘　　要：采用近空间升华法(close-spaced sublima-tion,CSS),以CdZnTe化合物粉料为原料制备了CdZnTe薄膜,采用XRD、SEM、紫外光谱仪等对其进行了性能表征,并研究了不同生长温度对薄膜生长速率、结构、Zn含量和光学特性的影响规律。研究结果表明,薄膜的生长速率随着生长温度的升高而增大,且温度>528℃时生长速率迅速增大;不同温度下制备的CdZnTe薄膜结构均为立方相,且都表现出沿(111)晶面的择优生长,高温时择优取向更强一些;晶粒尺寸随着温度升高而增大,在438℃时颗粒尺寸约为1μm,而568℃时约为20μm;薄膜禁带宽度受温度影响不大,在1.49～1.51eV之间。The Cd1-xZnxTe polycrystalline thin films were deposited by close-spaced sublimation（CSS） with the powders sources Cd1-xZnxTe.The influence of growth temperature on the growth rate,structure and properties of thin films were studied by analysising the film with SEM,XRD,UV spectrophotometer and so on.The results showed that the growth rate increased with the temperature increases and increasing rate speed up above the 528℃.The Cd1-xZnxTe thin films prepared at of the different temperature possess cubic structure,and tend to grow along the orientation of（111） face.The crystal size increases with the increases of temperature which reaches the 1 and 20μm at the 438 and 568℃ respectively.The opitcal energy gap of all the films are in the region of 1.49-1.51eV.

关 键 词：CdZnTe薄膜 近空间升华法 太阳能电池 形貌 结构 

分 类 号：TN304.2[电子电信—物理电子学]