B掺杂Si_(80)Ge_(20)合金的快速制备及热电性能  

Rapid synthesis of B-doped Si_(80)Ge_(20) alloy and their thermoelectric properties

作　　者：罗文辉[1] 李涵[1] 郝文[1] 胡小龙[1] 唐新峰[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,湖北武汉430070

出　　处：《功能材料》2011年第5期907-910,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2007CB607501)

摘　　要：采用电弧熔炼、快速球磨结合放电等离子烧结快速制备了单相Si80Ge20Bx(x=0.5、1、1.5、2)热电材料,对烧结后试样进行了物相结构分析和热电性能表征。结果表明,B的引入导致样品载流子浓度增加,电导率随着B掺量增加而大幅增加,而Seebeck系数反之下降。B的固溶增加试样中点缺陷浓度而导致声子散射增加,热导率下降明显。当x=1时,样品在1000K获得最大ZT值0.78。p-type polycrystalline Si80Ge20Bx（x=0.5,1,1.5,2） alloy were prepared by arc melting and ball milling followed by spark plasma sintering（SPS） method.The phase composition and the microstructure of the bulk were investigated,and their thermoelectric properties were measured form room terperature to 1000K.XRD patterns show that all samples are single phase.No obvious segregation phenomenon was found in the bulks form the FESEM and EDS results.The carrier concentration increased significantly by B-addition.The electrical conductivity was continuously enhanced with increasing B content,while the Seebeck coefficient was decreased.The lattice thermal conductivity was significantly decreased because the phonon scattering was increased by B-doped.The maximum ZT value of 0.78 is obtained at 1000K for the sample with x=1.

关 键 词：B掺杂SiGe合金 电弧熔炼 快速球磨 放电等离子烧结 热电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]