氧化钒薄膜光伏效应机理分析  

Analysis of Photovoltaic Mechanism of Oxide Vanadium Thin Film

作　　者：卢小铃[1] 王涛[1] 李贺[1] 董翔[1] 顾德恩[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院电子薄膜与集成器件重点实验室,四川成都610054

出　　处：《红外》2011年第5期14-18,共5页Infrared

基　　金：国家自然科学基金项目(60806021)

摘　　要：氧化钒薄膜是非致冷红外焦平面探测器的重要组成部分,光电特性一直是国内外的研究热点。用反应磁控溅射方法在K9玻璃衬底上制备了氧化钒薄膜,并在特定条件下对其进行了退火处理。结果发现,在300℃下退火180s的氧化钒薄膜在可见光照射情况下呈现出了光伏效应,这说明光生载流子在氧化钒薄膜表层形成后得到了有效分离。该光伏特性为氧化钒薄膜在光电探测器中的应用拓展提供了有力的理论依据。Oxide vanadium thin film is an important part of an uncooled infrared focal plane detector. Its photoelectric properties are studied extensively at home and abroad.Several oxide vanadium thin films are fabricated on K9 glass substrates by using a reactive magnetron sputtering method and are annealed under a particular condition.It is found that the oxide vanadium thin film annealed at 300℃exhibits the photovoltaic effect when it is illuminated by visible light.This should be attributed to the effective separation of the photo-induced carriers after the oxide vanadium thin film is formed.This photovoltaic property reveals the potential applications of oxide vanadium thin films in photoelectric detectors.

关 键 词：氧化钒薄膜 退火 光伏效应 Dember效应 场制表面电压 

分 类 号：O484.41[理学—固体物理]