低温等离子复合技术淀积Al_2O_3膜的研究  

Study of Al_20_3 Films by Low-Temperature Plasma Multiple-Unit Technology Deposition

作　　者：林锡刚[1] 师勉恭[1] 刘玮 缪竞威[1] 

机构地区：[1]四川大学原子核科学技术研究所,四川成都610064

出　　处：《功能材料》1999年第5期473-475,共3页Journal of Functional Materials

基　　金：国家自然科学基金!19735004;国家教委科学基金!1997(129);四川省科学基金!924097

摘　　要：利用真空技术、低能离子束刻蚀技术和射频磁控溅射相结合组成的低温等离子复合技术，在软磁材料表面获得了性能优良且满足工业生产要求的Al2O3绝缘膜。本文介绍了复合技术成膜装置特点及该Al2O3膜的特性。利用扫描电子显微镜、透射电镜及X射线光电子能谱仪对该膜进行了分析，试验结果认为，该膜的物理特性、电学特性及机械特性是优异的。对于该膜的半工业性试验也进行了研究。Aluminium oxide films with properties satisfactorily on magnetically soft material were produced by low - temperature plasma multiple - unite technology, it comprehended low - energy ion etching technology and r. f. magnetron sputtering technology. Properties of deposition films and an installation were Presented. Using SEM, TEM and XPS, we analyzed the microstructure of the Al2O3 films. Tests showed that physical, electrical as well as mechanical properties of Al2O3 films were excellent. An pilotplant tests of the films were investi-gated.

关 键 词：低温等离子 复合技术 软磁材料 氧化铝膜 

分 类 号：TG174.442[金属学及工艺—金属表面处理] TM271.2[金属学及工艺—金属学]