杂质对溶胶-凝胶SiO_2薄膜激光损伤的影响  

Influence of impurities on laser-induced damage of sol-gel SiO_2 films

作　　者：章春来[1,2] 李熙斌[1] 吕海兵[1] 袁晓东[1] 王治国[2] 祖小涛[2] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900 [2]电子科技大学物理电子学院,成都610054

出　　处：《强激光与粒子束》2011年第5期1267-1271,共5页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目;中央高校基本科研业务费专项资金项目(ZYGX2009X007)

摘　　要：采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO2增透膜,采用波长为1 064 nm的激光对其进行了小光斑激光预处理,对比研究了预处理前后的激光损伤差异,研究表明:激光预处理对于洁净的SiO2薄膜影响不大;含10μm SiO2颗粒杂质的样品微透镜效应很明显,容易成为损伤起始的种子,激光预处理后情况有所改善;含有CeO2颗粒杂质的样品表现出了很强的吸收性质,损伤阈值降低到不足洁净样品的一半。所有样品激光预处理后损伤形貌未发生变化,透光率峰值均有约50 nm的蓝移。Three kinds of anti-reflective SiO2 films,without impurities,with SiO2 particulate impurities and with CeO2 particulate impurities,were deposited on K9 glass by sol-gel dip-coating method.The influence of impurities on laser-induced damage of films was investigated before and after preconditioning with a 1 064 nm Nd：YAG pulsed laser.No obvious change in morphologies and damage threshold appears for pure films after conditioning.For the films with SiO2 impurities,10 μm-size SiO2 particles show obvious micro-focusing effect and act as damage-initiating seeds,which can be removed by conditioning.Moreover,the samples with CeO2 impurities have intense absorbing character,and their laser-induced damage threshold is less than half of the others＇.After the raster manner laser conditioning,transmittance peaks of all the samples shift to short-wave side about 50 nm with their laser-induced damage morphologies unchanged.

关 键 词：溶胶-凝胶 SiO2增透膜 激光预处理 激光辐照损伤 

分 类 号：TN24[电子电信—物理电子学]