Yb掺杂(Ba,Sr)TiO_3系PTCR材料的研究Ⅱ.耐压特性  

Investigation on Yb-Doped (Ba,Sr)TiO_3 PTCR Materials Ⅱ. Withstand Voltage Properties

作　　者：张中太[1] 张枫[1] 黄传勇[1] 唐子龙[1] 米庆[1] 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《功能材料》1999年第6期629-630,共2页Journal of Functional Materials

摘　　要：本文建立了ＰＴＣＲ 材料的晶界、晶粒微观模型，采用单晶粒的耐压强度表征ＰＴＣＲ 材料的耐压性能。并进一步对Ｙｂ 掺杂的（Ｂａ ，Ｓｒ）ＴｉＯ３ 材料的耐压强度进行了研究。发现Ｙｂ 二次掺杂降低材料的耐压性能，Ｍｎ 二次掺杂提高材料的耐压性能。A model of grain and grain boundary of PTCR materials was established in this paper.The withstand voltage of a single grain was induced to indicate the withstand voltage properties of grain boundary.The withstand voltage properties of Yb-doped (Ba,Sr)TiO 3 was investigated also.Yb doped after calcination reduces the withstand voltage property,Mn doped after calcination increases the withstand property.

关 键 词：PTCR 掺杂 耐压性能 陶瓷 

分 类 号：TQ174.756[化学工程—陶瓷工业]