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作 者:周益辉[1] 易师[1] 匡云飞[2] 何定庚[3]
机构地区:[1]中南大学化学化工学院,湖南长沙410083 [2]衡阳师范学院化学与材料科学系,湖南衡阳421008 [3]湖南大学化学化工学院,湖南长沙410083
出 处:《Journal of Chemistry and Chemical Engineering》2008年第11期38-44,共7页化学与化工(英文版)
摘 要:该文研制了1-(2-吡啶偶氮)-2-萘酚(PAN)修饰碳糊电极(CMCPE),并且建立了溶出伏安法测定Bi(III)的方法。在1.0X10^-4mol/L HCl底液中,从-0.6V~0.6V进行阳极化扫描,在0.2V左右出现一灵敏的铋溶出峰,其二次导数峰电流和Bi(III)浓度在6.0X10^-1mol/L~2.0X10^-5mol/L范围内呈良好的线性关系,其线性言和为ip=0.0225c+0.0619(ip为μA,c为10^-6mol/L),相关系数R为0.9985,检出限达1.0X10^-7mol/L。方法应用于胃叶中痕量Bi(III)的测定,实验结果满意。A 1- ( 2-Pyridylazo ) -2-naphthol modified carbon paste electrode ( CMCPE ) was fabricated and a stripping voltammetric procedure for determination of trace bismuth(III). In a 1.0x 10^-4mol/L HCI base solution, scanning from -0.6V to 0.6V, a sensitive stripping peak of bismuth(III) was obtioned at about 0.2V. The second-order derivative peak height is directly proportional to the concentration of bismuth(III) over the range from 6.0x lO^-7Tmol/L to 2.0x 10^-5Smol/L. The equation is ip(pA) =0.0225e ( 10^-6mol/L ) + 0.0619, with a correlation coefficient of 0.9985.The detection limit for bismuth(III) was as low as 1.0x 10^-7mol/L.The proposed method has been used in the determination of trace amounts of bismuth(III) inmedicines for stomach diseases, and satisfactory results were obtained.
关 键 词:1-(2-吡啶偶氮)-2-萘酚(PAN) 碳糊修饰电极 溶出伏安法 铋
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