Cr^(3+)掺杂对快速生长KDP晶体的生长习性和光学性能的影响  

Effect of Cr^(3+) Dopant on Growth Habit and Optical Properties of Rapid Grown KDP Crystal

作　　者：丁建旭[1] 刘冰[2] 王圣来[1] 牟晓明 顾庆天[1] 许心光[1] 孙洵[1] 孙云[1] 刘文洁[1] 刘光霞[1] 朱胜军[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]山东科学院新材料研究所,济南250014 [3]中国兵器工业第52研究所烟台分所,烟台264003

出　　处：《无机材料学报》2011年第4期354-358,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(50721002);新世纪优秀人才支持计划(NCET-10-0526)~~

摘　　要：采用快速法生长了掺杂不同Cr3+浓度的KDP晶体,测试了KDP晶体(100)面在不同Cr3+掺杂浓度下的生长速度及死区,表征了Cr3+掺杂的KDP晶体的Cr3+元素分布、透过光谱、散射颗粒分布和光损伤阈值.实验表明Cr3+易吸附在晶体(100)面,从而增大了(100)生长死区,并降低了(100)面生长速度.Cr3+使快速生长的晶体产生柱、锥面生长区分界线.元素分析表明Cr3+更容易通过柱面生长进入晶体,从而导致晶体在可见光波段及紫外波段透过率的降低,最明显的是在220、450和650 nm三处吸收峰的出现.Cr3+进入晶体后使晶体中散射颗粒增多,基频和三倍频脉冲激光照射下晶体的损伤阈值随Cr3+掺杂浓度的增加而降低,且柱面区的损伤阈值要低于锥面区的损伤阈值.KDP crystals were grown by rapid growth method in the presence of different concentrations of Cr3＋.Both the growth rate and dead zone influenced by Cr3＋ was measured,and the Cr3＋ element distribution,UV-Vis transmission spectra,distribution of scatter particles and laser induced damage threshold were characterized as well.The results reveal that Cr3＋ is prone to be absorbed onto（100） face,which decreases the growth rate and extends the growth dead zone.Additionally,Cr3＋ can induce growth macroscopic growth boundaries between prismatic and pyramidal growth sectors.The element analyses of Cr3＋ suggest that Cr3＋ is inclined to enter into prismatic sector,which leads to a decrease of transmittance in visible light and ultraviolet band,and brings three strong absorption peaks at 220 nm,450 nm and 650 nm.The entrance of Cr3＋ into crystal lattice can increase the number of scatter particles and decrease laser induced damage threshold.The laser damage threshold at fundamental frequency and the third harmonic generation decrease with the increase of Cr3＋ concentration.The damage threshold of KDP prismatic sector is lower than that of pyramidal sector.

关 键 词：快速生长 KDP晶体 生长习性 光学性能 掺杂 

分 类 号：O781[理学—晶体学]