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作 者:袁昌来[1,2] 巫秀芳[1] 刘心宇[1,2] 黄静月[1] 李擘[1] 梁梅芳[1] 莫崇贵[1]
机构地区:[1]桂林电子科技大学广西信息材料重点实验室,桂林541004 [2]中南大学材料科学与工程学院,长沙410083
出 处:《无机材料学报》2011年第4期387-392,共6页Journal of Inorganic Materials
基 金:国家大学生创新性实验计划资助项目(081059516);广西信息材料重点实验室研究基金(0710908-07-Z)~~
摘 要:采用印刷法制备了CuO掺杂SrFe0.9Sn0.1O3-δ(CSFS)厚膜负温度系数(NTC)热敏电阻(掺杂量为20mol%~50mol%).对其微观结构及电性能研究发现:随着CuO掺杂含量的增加,厚膜表面变得更加致密,室温电阻逐渐降低至0.46 M?,而热敏常数基本保持在3300K附近.CuO的加入导致SrFe0.9Sn0.1O3-δ分裂成多种铁含量更低的SrFe1-xSnxO3-δ物相(0.CuO-doped SrFe0.9Sn0.1O3-δ(CSFS) thick-film negative temperature coefficient(NTC) thermistors(20mol%,30mol%,40mol%,50mol%) were prepared by the screen printing method.The microstructures and electrical properties of CSFS thick films were determined.With the increase of CuO content,the surface morphology of thick films becomes denser.The room-temperature resistance values gradually decreases to about 0.46 MΩ and the thermistor-constant values are basically constant at around 3300 K.After the addition of CuO,SrFe0.9Sn0.1O3-δ is decomposed into various SrFe1-xSnxO3-δ(0.1x1) phases.By two-RQ series equivalent circuit model,impedance characteristics of the thick film containing 40mol% CuO content are investigated over the measured temperature range of 25–250℃.It is found that the total thick-film resistance is mainly attributed to the contribution of grain and grain boundary resistances,both of which show the typical NTC thermistor characteristics.Furthermore,the complete match of peak frequencies between the imaginary parts of impedance and electric modulus suggests that delocalized conduction is the main conduction mechanism in the thick-film NTC thermistors.
关 键 词:SrFe0.9Sn0.1O3-δ 厚膜NTC热敏电阻 CUO 阻抗分析
分 类 号:TN372[电子电信—物理电子学]
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