Simulation and prediction in laser bending of silicon sheet  

作　　者：WANG Xu-yue XU Wei-xing XU Wen-ji HU Ya-feng LIANG Yan-de WANG Lian-ji 

机构地区：[1]Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education, Dalian University of Technology, Dalian 116024, China

出　　处：《Transactions of Nonferrous Metals Society of China》2011年第A01期188-193,共6页中国有色金属学报（英文版）

基　　金：Projects (50975041, 50775019) supported by the National Natural Science Foundation of China;Projects (20062181, 2008S054) supported by Liaoning Province’s Government Science Fund, China

摘　　要：The laser bending of single-crystal silicon sheet （0.2 mm in thickness） was investigated with JK701 Nd：YAG laser. The models were developed to describe the beam characteristics of pulsed laser. In order to simulate the process of laser bending, the FEM software ANSYS was used to predict the heat temperature and stress-strain fields. The periodic transformation of temperature field and stress-strain distribution was analyzed during pulsed laser scanning silicon sheet. The results indicate that the mechanism of pulsed laser bending silicon is a hybrid mechanism in silicon bending, rather than a simple mechanism of TGM or BM. This work also gets silicon sheet bent after scanning 6 times with pulsed laser, and its bending angle is up to 6.5°. The simulation and prediction results reach well agreement with the verifying experiments.The laser bending of single-crystal silicon sheet (0.2 mm in thickness) was investigated with JK701 Nd:YAG laser. The models were developed to describe the beam characteristics of pulsed laser. In order to simulate the process of laser bending, the FEM software ANSYS was used to predict the heat temperature and stress-strain fields. The periodic transformation of temperature field and stress-strain distribution was analyzed during pulsed laser scanning silicon sheet. The results indicate that the mechanism of pulsed laser bending silicon is a hybrid mechanism in silicon bending, rather than a simple mechanism of TGM or BM. This work also gets silicon sheet bent after scanning 6 times with pulsed laser, and its bending angle is up to 6.5o. The simulation and prediction results reach well agreement with the verifying experiments.

关 键 词：laser bending silicon sheet pulsed laser SIMULATION 

分 类 号：TN248.13[电子电信—物理电子学] TG665[金属学及工艺—金属切削加工及机床]