不同形状InN/GaN量子点应变场的有限元分析  

Analysis on Finite Element of Elastic Strain Field in Differently Shaped Quantum Dots

作　　者：闫明雪[1] 赵博[1] 李辉[1] 张斯钰[1] 马祥柱[1] 曲轶[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《半导体光电》2011年第2期212-215,共4页Semiconductor Optoelectronics

摘　　要：量子点中的应变场分布对量子点的力学稳定性、压电性能以及光电性能有着重要的影响。基于有限元方法,并考虑了InN/GaN材料的六方纤锌矿结构特性,分别对透镜形、平顶六角金字塔形和六角金字塔形量子点的应变分布进行了比较,结果表明应变主要集中在浸润层和量子点内,在讨论量子点中电子能级时必须考虑浸润层的影响。量子点内的应变分布及静水应变和双轴应变受几何形状的影响明显。此外还计算了三种形状量子点的总能量,六角金字塔形量子点总能量最小,而透镜形量子点总能量最大,因此六角金字塔形是最稳定的结构,而透镜形是最不稳定的结构。The strain field distributions have important impacts on mechanical stability,piezoelectric effect and photoelectric effect of quantum dots.Based on the finite element approach,and considering the wurtzite structure of InN and GaN,investigated are the strain field distributions of lens,flattened hexagonal pyramid and hexagonal pyramid-shaped quantum dots.The results show that the strain field distributions are focused in quantum dots and wetting layer,so it should be noticed that the wetting layer has an effect on electronic energy level in quantum dots.The strain field distributions in quantum dots,hydrostatic strain and biaxial strain are affected by geometry of quantum dots.And the energy of three kinds of quantum dots are calculated,it is shown that the energy of hexagonal pyramid-shaped quantum dots is the lowest and the energy of lens-shaped quantum dots is the highest,so the hexagonal pyramid-shaped quantum dots are the steadiest.

关 键 词：有限元 InN/GaN量子点 应变 应变能 

分 类 号：TN304[电子电信—物理电子学]