CdTe薄膜的射频磁控溅射制备及表征  

Preparation and Characterization of RF Magntron Sputtering CdTe Thin Film

作　　者：王波[1] 张静全[1] 王生浩[1] 冯良桓[1] 雷智[1] 武莉莉[1] 李卫[1] 黎兵[1] 曾广根[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《四川师范大学学报（自然科学版）》2011年第3期376-380,共5页Journal of Sichuan Normal University（Natural Science）

基　　金：国家高技术研究发展计划(2006AA05Z418)资助项目

摘　　要：采用射频磁控溅射技术制备了CdTe薄膜,使用探针式台阶仪、X射线衍射分析仪、紫外可见分光光度计、扫描电镜等表征了薄膜的厚度、结构、透过率、表面形貌等随溅射工艺的变化.结果表明:沉积速率随着功率的增加而增加,随气压的增加而呈线性减小;薄膜的结晶程度随气压增大而降低;功率从100 W增大到180 W,出现了CdTe薄膜晶相从立方相向六方相的转变;当沉积条件为纯氩气氛、气压0.3 Pa、功率100 W、室温时,沉积的CdTe薄膜结晶性能最好.The cadmium telluride thin film was deposited on glass substrate at room teperature by RF magnetron sputtering.The film was characterized to show the variation of its properties with the diverse deposition conditions by X-ray diffraction,UV-VIS spectrometer,scanning electrical microscope,etc.The result indicates that the deposition speed increases with the increase of deposition power and decreases with the increase of pressure.As the pressure decreases,the CdTe film＇s crystallinity gets worse.It is found that the cubic crystalline structure of deposited sample changes to the crystalline hexagonal CdTe phase as the power increased from 100 W to140 W.While the CdTe thin films is deposited under the pressure of 0.3 Pa,with the power of 100 W and at room temperature,the crystallinity is the best and the band gap is 1.45 eV.

关 键 词：射频磁控溅射 CDTE 禁带宽度 

分 类 号：O484[理学—固体物理]