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出 处:《Chinese Physics B》2011年第5期342-346,共5页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China (Grant Nos. 61078057 and 50702046);the Northwestern Polytechnical University "Aoxiang Star" Project;the Northwestern Polytechnical University Foundation for Fundamental Research of China (Grant No. NPU-FFR-JC200821/JC201048)
摘 要:Based on density functional theory calculations, the electronic and magnetic properties oi Co-duped SnO are investigated. It is found that the spin-polarized state, with a magnetic moment of about 1.0 μB per Co-dopant, is more favorable in energy than the non-spin-polarized state. Moreover, the origin of the ferromagnetism in Co-doped SnO is found to be the double exchange mechanism. Our results indicate that Co-doped SnO is a possible candidate of the u-type snintronics material.Based on density functional theory calculations, the electronic and magnetic properties oi Co-duped SnO are investigated. It is found that the spin-polarized state, with a magnetic moment of about 1.0 μB per Co-dopant, is more favorable in energy than the non-spin-polarized state. Moreover, the origin of the ferromagnetism in Co-doped SnO is found to be the double exchange mechanism. Our results indicate that Co-doped SnO is a possible candidate of the u-type snintronics material.
关 键 词:dilute magnetic semiconductors p-type SnO first-principles calculations
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