Influence of Ga^+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers  

作　　者：祁先进 王寅岗 缪雪飞 李子全 黄一中 

机构地区：[1]College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics [2]Department of Materials,Oxford University,Oxford OX1 3PH,UK [3]School of Materials Science and Engineering,Nanyang Technological University,Singapore

出　　处：《Chinese Physics B》2011年第5期388-392,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 50671048)

摘　　要：This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

关 键 词：thermal relaxation exchange bias ion irradiation energy barrier 

分 类 号：O611.3[理学—无机化学]