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作 者:王骁栋 冯亮 魏慎金 朱焕锋 陈坤 徐达 张颖 李晶
机构地区:[1]Department of Optical Science and Engineering,Fudan University [2]Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education),Fudan University
出 处:《Chinese Optics Letters》2011年第5期85-88,共4页中国光学快报(英文版)
基 金:supported by the National Nature Science Foundation of China (No. 60578047);the National "973" Program of China (Nos. 2009CB929201 and No.2010CB933703)
摘 要:We prepare Si x (ZrO 2 ) 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter ana- lyzer, respectively. With the proper Si-doped Si x (ZrO 2) 100 x interlayer, the Al/ Si x (ZrO 2 ) 100 x /Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.We prepare Si x (ZrO 2 ) 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter ana- lyzer, respectively. With the proper Si-doped Si x (ZrO 2) 100 x interlayer, the Al/ Si x (ZrO 2 ) 100 x /Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.
关 键 词:Chemical analysis Composite films Emission spectroscopy Fault tolerance Nonvolatile storage Optical properties Spectroscopic ellipsometry Zirconium alloys
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