A tunable yellow emission from three-band emission of singly doped single-phased phosphor BaY_2S_4:Ho^(3+)  

作　　者：赵君风 陈茜 荣春英 余丽萍 廉世勋 

机构地区：[1]Key Laboratory of Resource Fine-Processing and Advanced Materials,Universities of Hunan Province,College of Chemistry and Chemical Engineering,Hunan Normal University [2]Key Laboratory of Chemical Biology & Traditional Chinese Medicine Research (Ministry of Education),Hunan Normal University

出　　处：《Journal of Rare Earths》2011年第5期436-439,共4页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (20971042 and 50772035);the Science and Technology Office of Educa-tion Department of Hunan Province (10A070);the Science and Technology Bureau of Changsha City Government (K0902014-11)

摘　　要：The establishment of an approach to design tunable yellow emission through singly doped single-phased phosphors to obtain white LED-based InGaN chip was reported. BaY2–xS4：xHo3＋ phosphors were prepared by the high temperature solid state reaction and characterized by X-ray diffraction and photoluminescence spectra. Under the excitation of 465 nm,the emission spectra of these phosphors exhibited three sharp emission lines peaked at about 492,543 and 661 nm of Ho3＋ corresponding to 5F3,5F4 （5S2） and 5F5→5I8 transitions,respectively,with comparable intensities,resulting in a yellow light emission. The luminescence mechanism for Ho3＋ in BaY2S4 was explained.The establishment of an approach to design tunable yellow emission through singly doped single-phased phosphors to obtain white LED-based InGaN chip was reported. BaY2–xS4：xHo3＋ phosphors were prepared by the high temperature solid state reaction and characterized by X-ray diffraction and photoluminescence spectra. Under the excitation of 465 nm,the emission spectra of these phosphors exhibited three sharp emission lines peaked at about 492,543 and 661 nm of Ho3＋ corresponding to 5F3,5F4 （5S2） and 5F5→5I8 transitions,respectively,with comparable intensities,resulting in a yellow light emission. The luminescence mechanism for Ho3＋ in BaY2S4 was explained.

关 键 词：rare earths BaY2S4：Ho3＋ yellow emission singly doped single-phased phosphor 

分 类 号：TN104.3[电子电信—物理电子学]