不同Zn含量的GaSb热电半导体及其性能  

Thermoelectric Properties of GaSb with Different Zn Contents

作　　者：张晓军[1,2] 应鹏展[1] 崔教林[2] 付红[1,2] 颜艳明[1,2] 

机构地区：[1]中国矿业大学,江苏徐州221008 [2]宁波工程学院,浙江宁波315016

出　　处：《材料科学与工程学报》2011年第1期108-111,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(50871056)

摘　　要：采用放电等离子烧结法(SPS)制备了四种不同Zn含量的GaSb热电半导体(分别是GaSb,Zn0.9Ga2.1Sb2,ZnGa2Sb2和Zn1.1Ga1.9Sb2),并分析研究其热电性能。结果表明:加Zn后虽然GaSb的Seebeck系数大幅度降低,但电导率提高了约两个数量级,热导率也得以降低,最终热电性能明显提高。在713K时Zn1.1Ga1.9Sb2的最大ZT值达到0.11,比本征GaSb的ZT值提高了近6倍。Four GaSb based compounds with AⅢBⅤ type semiconductors（GaSb,Zn_（0.9）Ga_（2.1）Sb_2,ZnGa_2Sb_2 and Zn_（1.1）Ga_（1.9）Sb_2） were prepared by spark plasma sintering,and their thermoelectric（TE） properties were evaluated.Measurements reveal that although the Seebeck coefficient decreases substantially, thermal conductivity decreases and the electrical conductivity is about two orders high in magnitude compared with that of intrinsic GaSb over the entire temperature range.As a consequence,the thermoelectric performance has been significantly improved.The maximum dimensionless TE figure of merit（ZT） of 0.11 was achieved for Zn_（1.1）Ga_（1.9）Sb_2 at 713 K,which is about 6 times of that of GaSb at the corresponding temperature.

关 键 词：GaSb基半导体 放电等离子烧结 热电性能 

分 类 号：TN304[电子电信—物理电子学]