用于CMOS集成电路的IDDQ测试技术研究  

Research on IDDQ Test Technology for CMOS LSI

作　　者：吉国凡[1] 薛宏[1] 王忆文 

机构地区：[1]东北微电子研究所,沈阳110032

出　　处：《微处理机》1999年第3期13-15,29,共4页Microprocessors

摘　　要：主要介绍了 CMOS电路的 IDDQ测试技术。该技术的实现方法有两种 :一种是片内 IDDQ测试 ;另一种是片外 IDDQ测试。前一种是在被测芯片内 ,设计一个电流传感器。后者是在被测芯片外的负载板上附加一个小电路 ,变 IDDQ为电压测试 。This paper introduces test technology of CMOS LSI.There are two ways which implement the test technology.One way is I DDQ testing inside of the tested chip,the other way is I DDQ testing outside of the tested chip.The former designs a current sensor in the tested chip; I DDQ testing of the latter is turned into voltage testing through being attached a small circuit on the load board outside of the tested chip,and then the goal of I DDQ testing is arrived at.

关 键 词：CMOS集成电路 IDDQ 测试 集成电路 

分 类 号：TN432.07[电子电信—微电子学与固体电子学]