基于板上封装技术的大功率LED热分析  

Thermal analysis of high-power LED based on COB packaging technology

作　　者：姜斌[1] 宋国华[2] 缪建文[3] 袁莉[2] 纪宪明[2] 

机构地区：[1]南通大学电子信息学院,江苏南通226019 [2]南通大学理学院,江苏南通226007 [3]南通大学化学化工学院,江苏南通226019

出　　处：《电子元件与材料》2011年第6期48-52,共5页Electronic Components And Materials

基　　金：江苏省自然科学基金资助项目(No.BK2008183);南通市应用研究资助项目(No.K2010058);南通市公共技术服务平台资助项目(No.DE2010005);南通大学自然科学研究资助项目(No.09Z005)

摘　　要：根据大功率LED板上封装(COB)技术的结构特点,提出三种COB方法。第一种方法是把芯片直接键合在铝制散热器上(COB—III型),另外两种方法是分别把芯片键合在铝基板上和铝基板的印刷线路板上(COB—II和COB—I型),并对三种COB的热特性进行有限元模拟、实验测量和对照分析。结果表明:在环境温度为30℃时,采用第一种封装方法的芯片结温比第二、三种方法分别下降21.5,42.7℃,热阻也分别下降25.7,58.8 K/W;采用第一种封装方法的芯片光衰小于第二、三种封装方法。Three kinds of high-power LED packing methods based on the structure and the character of COB were presented, the first method was that the LED chip was directly boned to the aluminum radiators （COB--Ill）, the 2nd and 3rd methods were that LED chips were bonded on aluminum pad and PCB board （COB--II, COB--I）, respectively. The thermal characteristics of the three COB structures were simulated by FEM analysis and tested. The results show that when the ambient temperature is 30 ℃, the LED junction temperatures of COB--II and COB--I structures are 21.5 ℃ and 42.7 ℃ respectively higher than that of COB--III structure, and heat resistances of COB--II and COB--I structures are 25.7, 58.8 K/W respectively higher than that of COB--III, and COB--Ill structure have lower optical decline.

关 键 词：大功率LED 板上封装 热阻 有限元热分析 

分 类 号：TN383[电子电信—物理电子学]