金属催化剂作用下纳米ZnO生长(英文)  

Growth of ZnO Nanostructures on Metal-Filled Porous Silicons

作　　者：闵嘉华[1] 王斌[1] 梁小燕[1] 赵岳[1] 朱正辉[1] 胡思嫣[1] 

机构地区：[1]上海大学,上海200072

出　　处：《稀有金属材料与工程》2011年第5期761-764,共4页Rare Metal Materials and Engineering

基　　金：the Shanghai Leading Academic Discipline(S30107)

摘　　要：在多孔Si上使用不同催化剂成功生长ZnO纳米结构。结果表明,Au作催化剂在Si衬底上得到末端呈六角形的ZnO纳米棒,Cu作催化剂在Si(100)和(111)分别上生长出带状和棒状纳米ZnO,Zn作催化剂在Si衬底上则获得ZnO纳米线。Zn催化制备的ZnO纳米线晶面间距为0.283nm,生长方向是[0110],具有结晶较好的六角纤锌矿晶体结构。比较了不同催化剂制备ZnO的光学性能,发现得到Zn催化制备的ZnO纳米线缺陷绿光峰最弱,因此Zn催化生长制备的纳米ZnO结构质量较好。空气中退火后,3种催化剂生长的纳米ZnO的缺陷发光峰位置不变,而强度变弱。The growth of zinc oxide（ZnO） nanostructures on Au-,Cu-and Zn-filled（111） and（100） porous silicons（PSs） has been investigated.The results indicate that the ZnO nanostructures grown on Au-filled（111） PS are possessed of rod-shapes with hexagonal end faces,those on the Cu-filled（100） or（111） PS are possessed of belt-shapes or rod-shapes,and those on the Zn-filled（100） or（111） PS are possessed of wire-shapes.The ZnO growth on the Au-and Cu-filled PS are mainly along c-axis orientation,while its growth on the Zn-filled PS are mainly along [0110 ] orientation,and it possesses a single crystal hexagonal structure without dislocations and stacking faults.In addition,the green emission intensity of the ZnO grown on Zn-filled PS caused by oxygen vacancies of the ZnO is weaker than that of the ZnO grown on Au（Cu）-filled PS,.It could be concluded that the ZnO grown on Zn-filled PS produces a better quality.After annealing in air,the positions of the green emission peaks do not vary,while the intensities are weakened.

关 键 词：纳米ZNO 金属催化剂 生长取向 光谱特性 

分 类 号：TB383.1[一般工业技术—材料科学与工程]