添加Sb的Ga_2Te_3合金热电性能  

Thermoelectric Properties of Sb-Doped Ga_2Te_3 Alloy

作　　者：付红[1] 应鹏展[1] 崔教林[2] 颜艳明[1,2] 张晓军[1,2] 

机构地区：[1]中国矿业大学,江苏徐州221116 [2]宁波工程学院,浙江宁波315016

出　　处：《稀有金属材料与工程》2011年第5期849-852,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50871056)

摘　　要：本研究采用等摩尔分数的Sb元素替换Ga2Te3中的Ga元素,并利用放电等离子烧结技术制备Ga1.9Sb0.1Te3合金,研究其微观结构和热电性能。结果表明,添加Sb元素后,材料的Seebeck系数为130～240μV/K,明显低于单晶Ga2Te3,电导率为3600～1740??1·m?1,至少是单晶Ga2Te3的17倍,热导率提高近25%。在649K时Ga1.9Sb0.1Te3合金的热电优值(ZT)达到最大值0.1,是同温度下单晶Ga2Te3ZT值的3倍。Sb element was substituted for Ga in the Ga2Te3 alloy with the same molar fraction and Ga1.9Sb 0.1Te3 alloy was prepared by spark plasma sintering.The microstructure and the thermoelectric（TE） property of the alloy were investigated.Results show that after Se doping the Seebeck coefficient of the sample is about 130-240 μV/K,much lower than that of single crystal Ga2Te3,and the electrical conductivity decreases from 3600 to 1740 ？？1·m？1 with temperature elevation to 649 K,being at least 16 times higher than that of single crystal Ga2Te3 at the corresponding temperature.The thermal conductivity increases by about 25% after Sb doping.The maximum TE figure of merit（ZT） value of 0.1 is obtained at 649 K,which is approximately 3 times as large as that of single crystal Ga2Te3 at the corresponding temperature.

关 键 词：Ga1.9Sb0.1Te3 微结构 热电性能 

分 类 号：TN304[电子电信—物理电子学]