指数掺杂结构对透射式GaAs光电阴极量子效率的影响研究  

Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes

作　　者：张益军[1] 牛军[1] 赵静[1] 邹继军[1] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《物理学报》2011年第6期616-621,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60678043;60801036);江苏省高等学校研究生科研创新计划(批准号:CX09B-096Z);南京理工大学科研计划(批准号:2010ZYTS032)资助的课题~~

摘　　要：通过在一维连续性方程光电子产生函数项中加入短波约束因子,修正了指数掺杂和均匀掺杂透射式GaAs光电阴极量子效率公式.利用修正的透射式阴极量子效率公式分别拟合制备的指数掺杂和均匀掺杂透射式阴极量子效率实验曲线,符合得很好.另外拟合得到的阴极性能参数表明,由于内建电场的作用,指数掺杂阴极的性能要好于均匀掺杂阴极,指数掺杂结构能够明显提高透射式阴极的量子效率.The quantum yield formulas for exponential-doping and uniform-doping transmission-mode GaAs photocathodes are modified by adding a shortwave constraint factor to the photoelectron generation function in a one-dimensional continuity equation.Based on the modified transmission-mode quantum yield formulas,the experimental exponential-doping and uniform-doping transmission-mode quantum yield curves are respectively fitted,and the fitted curves are consistent well with the experimental curves.In addition,the fitted cathode performance parameters indicate that as compared with the uniform-doping photocathode,the exponential-doping photocathode can obtain a higher cathode performance because of the built-in electric field.The exponential-doping structure can effectively increase the quantum yield of transmission-mode photocathode.

关 键 词：透射式光电阴极 指数掺杂 量子效率 内建电场 

分 类 号：O462.3[理学—电子物理学]