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作 者:V.A.C. Haanappel I.C. Vinke L.G.J. de Haart D. Stolten
机构地区:[1]Institute of Energy Research, Forschungszentrum Jiilich GmbH, Jalich 52425, Germany
出 处:《Journal of Energy and Power Engineering》2011年第5期474-479,共6页能源与动力工程(美国大卫英文)
摘 要:In the frame of the ZeuS-Ill project, a model study was started on evaluation the area-specific resistances (ASRs) of various layers being used in SOFC stacks. It is well known that stack performance not only depends on cell resistance but also on the electrical conductivity of the various applied contact and protective layers. Various layers have been tested under simulated SOFC conditions, and results have shown that the lowest ASR value, about 3 mΩ.cm2, was obtained for an LSM (2) contact layer. A significantly higher resistance was found for the combined contact and protective layer LCC10-Mn3O4, being around 37 mΩ.cm2 Related to the various tests, the total ASR of an F-design stack, developed by Forschungszentrum Jiilich, under ideal conditions can be estimated. In this case the ASR value was calculated as the sum of that of the LCC10-Mn3O4 layer and the formed oxide scale due to oxidation of Crofer22APU. Contacting resistance at the anode side was considered negligible. When differences in the ASR values occurred when compared with that from current-voltage measurements performed with real SOFC stacks, this can be explained by the limited contact area between interconnect and cathode. These results can be used to model the influence of various applied layers and different geometric contact areas on the overall ASR as determined from performance measurements with SOFC stacks.
关 键 词:Area-specific resistance (ASR) SOFCS CATHODE electrical conductivity contact layer.
分 类 号:TM911.4[电气工程—电力电子与电力传动] TH132.421[机械工程—机械制造及自动化]
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